Buku Persamaan Ic Dan Transistor Circuits
Buku Persamaan Ic Dan Transistor Amplifier Circuit
Rangkaian pre amp mic 2 transistor. IC (Integrated Circuit). Dan perbedaan produk rekayasa elektronik praktis dan otomatis,persamaan dan perbedaan produk. Feb 25, 2010 In a grounded-emitter transistor circuit. Transistor sebagai penguat Amplifier circuit. Perubahan arus kecil melalui basis transistor dan. Buku persamaan transistor & IC atau komponen elektro lainnya sudah diperbaharui jadi program. Lbh praktis & manfaat optimal dibanding manual dgn buku. Teknisi maupun ygbaru belajar elektronika akan sangat terbantu dalam mempercepat menemukan persamaan komponen aktif yg ingin ditemukan dalam tempo cukup singkat. Buku persamaan ic dan transistor; tabel persamaan transistor mosfet. Aug 5, 2018 - Buku Persamaan Ic Dan Transistor Testers Buku Persamaan Ic Dan. The circuit uses single 2051 chip, and relay or opto-triac output for. Dengan paket program persamaan transistor dan persamaan komponen IC hanya tinggal: memasukan tipe komponen yang dicari, jreng. Melewati transistor memenuhi persamaan arus to-tal transistor sebagai berikut: I E = I C + I B (1) Gambar 1: Struktur dari BJT tipe npn dan pnp (diambil dari buku 'Fundamentals of Analog Cir-cuits, 2nd edition' oleh Thomas L. Floyd dan David Buchla). Gambar 2: Simbol dari BJT tipe npn dan pnp (di-ambil dari buku 'Fundamentals of Analog Circuits.
Rangkaian pre amp mic 2 transistor. IC (Integrated Circuit). Dan perbedaan produk rekayasa elektronik praktis dan otomatis,persamaan dan perbedaan produk. Feb 25, 2010 In a grounded-emitter transistor circuit. Transistor sebagai penguat Amplifier circuit. Perubahan arus kecil melalui basis transistor dan.
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Diode, Transistor Germanium, Mosfet, IC RegulatorDiode (Ultra Fast, Schottky)
URIJG 1548 1A Diode kacang
BYM26C 2,A 600V Dioda kacang Philips Foto
1N5408 3A 1000V Dioda kacang Foto
RGP10G 1A 400V Vishay fast diode
RG2A 1A 600V Sanken Japan fast diode Foto
RU3 1,5A 400V Sanken Japan fast diode
RU3C 1,5A 1000V Sanken Japan fast diode
UG2G 2A 400V Gulfsemi Ultrafast Recovery Foto
20NFA40-FA1 2A 400V FRED/Ultra fast NIEC Japan
ER206 2A 600V Super Fast Recovery
RL2Z 2A 200V Sanken Japan fast diode Foto
RK36 2A 60V Schottky Diode Sanken Japan Foto
RM3A 2,5A 600V Sanken Japan Foto
SF34 3A 200V Ultra fast Recovery
MUR 460 4A 600V Ultra Fast Rec Foto
FMB-G24H 10A 40V Schottky (High frequency rectifier) Foto
Zener Diode
TZP33A/ 1N4752A Vishay 33V 1W
TVS Diode
1N5908 Motorola 6V 1500W
1N6290A 1.5KE 62A Motorola 62/53V 1500W
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Avalanche Diode
RM26 Sanken Japan Vrm=50V Izsm=3A Foto
Description
Avalanche occurs in diodes when the voltage across a diode exceeds a specified value. An avalanche diode is a diode that is designed to break down and conduct at a specified reverse bias voltage. This is somewhat similar, but not identical to Zener breakdown.
When avalanche occurs in a typical diode or other semiconductor, it generally causes catastrophic failure. However, if the diode is designed to control the avalanche phenomenon, the diode can tolerate avalanche caused by overvoltage, and remain undamaged. Thus, avalanche type diodes are often used in protecting circuits against transient high voltages which otherwise would damage the circuit.
Avalanche breakdown is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents to flow within materials which are otherwise good insulators. Avalanche breakdown can occur within solids, liquids, or gases when the voltage applied across the insulating material is great enough to accelerate free electrons to the point that, when they strike atoms in the material, they can knock other electrons free.
Avalanche occurs extremely quickly, and as a result, avalanche diodes are the fastest surge-suppression devices. Applications include protection against transients, such as in high voltage or inductive circuits, and when putting diodes in series.
Applications for Avalanche Diodes
Avalanche type diodes can result in increased reliability in many applications, particularly those where voltage transients are expected. Due to its high speed and ability to withstand large numbers of transients, avalanche diodes are used to protect circuits against surges, lightning and other transients. They are faster than MOV’s, zeners, and gas tubes.
Avalanche diodes are the diode type of choice in high voltage circuits, such as high voltage multipliers, due to possibility of transients caused by arcs, pulses, etc.
Another usage for rectifiers with avalanche capability is putting individual diodes in series to obtain higher reverse voltage capability. The voltage normally divides in proportion to the reverse resistance of each diode. Since there could be large variation in the reverse resistance, the voltage may not divide equally across the series string of diodes. A transient of sufficient amplitude will drive the voltage across one or more diodes into the breakdown region. A typical diode will exhibit catastrophic failure when this occurs. However, avalanche type diodes will cause the voltage to divide much more evenly. Also, the avalanche diode is capable of protecting itself by handling transient energy, providing it does not exceed the energy rating of the diode. Thus, whenever diodes are connected in series to increase the voltage rating, avalanche diodes should be used.
Inductive loads, upon interruption, generate voltage transients. Particular care should be exercised when specifying rectifiers for these applications, especially for the freewheeling diode placed across and inductive load. Motors, relays, solenoids and motor starters are typical of equipment, which are capable of rupturing ordinary silicon rectifiers. Unless it can be clearly shown that the peak inductive transient voltage cannot exceed the voltage rating of the diode, avalanche diodes are the preferred type for this application.
Summary
Avalanche diodes are designed to break down at a well-defined reverse voltage without being destroyed. Diodes designed to control this phenomenon are called avalanche diodes. They are well suited for use in protective applications, inductive circuits, high voltage circuits and when connecting diodes in series. In many applications, avalanche diodes will survive while normal diodes will fail. Thus, use of avalanche diodes in selected applications can result in improved reliability.
Snubber Diode
SARS02 Sanken 1,25A 800V Use in SMPS with flyback Foto
Damper Diode
RH3F Sanken 2,5A 1500V Foto
Diode Bridge
S1NB60 1A 600V Foto
6F Bridge besar Foto kanan
RB-150 Sanken 1,5A 70V Foto
GBU4J 4A 600V Vishay diode bridge Foto
RS808 8A 800V
MIC MB3510 35A 1000V
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Transistor, Mosfet
BU2708AF (High voltage Vceo = 825V; Ic = 8A, high speed switching NPN transistor)
IRF Z34N N- ch Power Mosfet 55V 29A
2SK2128 N-ch Mosfet 800V 2A
2SK727 N- ch Power Mosfet 900V 5A
2SK3659 Switching N Mosfet
7N60 high voltage power MOSFET
IRF3710 HEXFET® Power MOSFET
2SK3568 12A 500V N Ch Toshiba (49)
2SK3569 10A 600V Toshiba (11)
2SK3667 10A 600V N Ch (9)
2SK3683 19A 500V FU? (14)
2SK3799 8A 900V N ch Toshiba (11)
2SK4014 6A 900V N ch (2)
2SK4143 20A 60V N-ch (1)
2SK3115B 6A 600V N-ch (4)
2N4392 J-FET gold leadsFoto
9012
9013
MPS2222A
KSP2222A NPN 40V 0.6A 300MHz Fairchild Foto
KTD863 NPN 60V 1A 150MHz KEC Foto
STS733 PNP (=2SA733) 100MHz General Purpose amplifier (1000 pcs)
STD1862 NPN 30V 2A Audio Power Amplifier (500 pc)
2SA1206 PNP general purpose amplifier & high speed switching app Datasheet
2SK63 JFET,N-CHANNEL,TO-9 120V, 0,2A, 0,47W
2SC2786 Foto
2SC4769
2SD2375P Panasonic (made in Japan) hFE 800-1500, NPN, 60V, 3A FotoDatasheet
BF173
MC79L05CP Gold plate
LM317T
LED 2 warna (kaki 3) Foto
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Overcurrent Protector
Berfungsi sbg circuit protector thd short circuit load. Beroperasi di circuit AC/ DC, memiliki internal resistance yg rendah. Memutus circuit dengan cepat dan aman saat melebihi arus max.
ICP-N25 Max current 1A 50V 'Rohm'
ICP-N38 Max current 1,5A 50V 'Rohm'
SIP25 Max current 1A 50V
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Germanium Transistor
2SA49 Toshiba PNP
2SA53 Toshiba PNP Foto
2SA102 Matsushita PNP
2SA202 Sanyo
2SA350 Hitachi
2SA468 Toshiba
AD161 GERMANIUM Alloy Power transistor NPN /32V/1A/4W
AD162 GERMANIUM Alloy Power transistor PNP/32V/1A/4W
AD161 Datasheet
AD164
Power Audio
LM1875T (original)
LM3886T (original)
LM4700TF (original) 30Wx2 with Mute & Standby mode Foto
LM4700TF secara garis besar hampir sama pinoutnya dg LM3886TF.
LA42152 15Wx2 stereo power amplifier
TDA7294 100W
MJL 21193 16 A, 250 V PNP Bipolar
MJL 21194 17 A, 250 V NPN Bipolar
AN274 1.3 W AUDIO POWER AMP 10-LEAD METAL CAN
IC, Regulator, DC converter
24C04 EEPROM Atmel 512x8 (4K)
24C08 EEPROM TI 1024x8 (8K)
24C16 EEPROM 2Kx8
NE555
TL494
RC4558P texas
UC3843 Current-Mode PWM Controller
ULN2003
STM1240 Sanken STM1240
TNY266PN
LT1072HVCT 1,25A DC to DC converter 100kHz, max input 60V, max output 75V
LT1070HVCT 5A DC to DC converter 100kHz, max input 60V, max output 75V
Regulator Sanken (kaki 5)
Dropper type
3033C 3.3V 1.5A
3120J 12V 2A
Switching type
8033S 3.3V 3A
8050J 5V 1.5A
8090S 9V 3A
Buku Persamaan Ic Dan Transistor Circuits Circuit
8120S 12V 3A8150S 15V 3A
Buku Persamaan Ic Dan Transistor Circuits Diagram
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